JPS6356708B2 - - Google Patents

Info

Publication number
JPS6356708B2
JPS6356708B2 JP55120188A JP12018880A JPS6356708B2 JP S6356708 B2 JPS6356708 B2 JP S6356708B2 JP 55120188 A JP55120188 A JP 55120188A JP 12018880 A JP12018880 A JP 12018880A JP S6356708 B2 JPS6356708 B2 JP S6356708B2
Authority
JP
Japan
Prior art keywords
sbd
layer
transistor
forming portion
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55120188A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5745274A (en
Inventor
Takeshi Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55120188A priority Critical patent/JPS5745274A/ja
Publication of JPS5745274A publication Critical patent/JPS5745274A/ja
Publication of JPS6356708B2 publication Critical patent/JPS6356708B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP55120188A 1980-08-30 1980-08-30 Semiconductor device Granted JPS5745274A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55120188A JPS5745274A (en) 1980-08-30 1980-08-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55120188A JPS5745274A (en) 1980-08-30 1980-08-30 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5745274A JPS5745274A (en) 1982-03-15
JPS6356708B2 true JPS6356708B2 (en]) 1988-11-09

Family

ID=14780082

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55120188A Granted JPS5745274A (en) 1980-08-30 1980-08-30 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5745274A (en])

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009164559A (ja) * 2007-12-14 2009-07-23 Sanken Electric Co Ltd 複合半導体装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4982244A (en) * 1982-12-20 1991-01-01 National Semiconductor Corporation Buried Schottky clamped transistor
JPS59177961A (ja) * 1983-03-28 1984-10-08 Fujitsu Ltd 半導体装置の製造方法
JPH0194659A (ja) * 1987-10-05 1989-04-13 Nec Corp バイポーラ型半導体集積回路装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4930320A (en]) * 1972-07-14 1974-03-18

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009164559A (ja) * 2007-12-14 2009-07-23 Sanken Electric Co Ltd 複合半導体装置

Also Published As

Publication number Publication date
JPS5745274A (en) 1982-03-15

Similar Documents

Publication Publication Date Title
US4933737A (en) Polysilon contacts to IC mesas
US5061645A (en) Method of manufacturing a bipolar transistor
JPH03222336A (ja) 半導体装置の製造方法
KR910006699B1 (ko) 반도체 장치
JP3475634B2 (ja) ツェナーダイオードおよびその製造方法
JPS6356708B2 (en])
US5536966A (en) Retrograde NWell cathode Schottky transistor and fabrication process
US4905070A (en) Semiconductor device exhibiting no degradation of low current gain
JPH09181335A (ja) 半導体装置
JPH0136710B2 (en])
JPH073870B2 (ja) 半導体集積回路装置の製造方法
JPS6246072B2 (en])
JPH0420263B2 (en])
JPS60207375A (ja) 半導体装置の製造方法
JPS61108162A (ja) 半導体装置およびその製造方法
JPH0437581B2 (en])
JPH01253272A (ja) バイポーラトランジスタ
JPS61269373A (ja) 半導体装置
JPS596574A (ja) 半導体装置の製造方法
JPS639150A (ja) 半導体装置の製造方法
JPH0157506B2 (en])
JPS60170979A (ja) 半導体集積回路の製造方法
JPH05102290A (ja) 半導体装置
JPH0376023B2 (en])
JPH05299587A (ja) 半導体集積回路とその製造方法